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HFR8A12D - Glass Passivated Hyperfast Recovery Rectifier

HFR8A12D_7814817.PDF Datasheet


 Full text search : Glass Passivated Hyperfast Recovery Rectifier


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FUF2005 FUF2007 FUF2006 FUF2004 FUF2003 FUF2002 FU 50 V, 2 A glass passivated ultrafast recovery rectifier
100 V, 2 A glass passivated ultrafast recovery rectifier
200 V, 2 A glass passivated ultrafast recovery rectifier
400 V, 2 A glass passivated ultrafast recovery rectifier
800 V, 2 A glass passivated ultrafast recovery rectifier
1000 V, 2 A glass passivated ultrafast recovery rectifier
600 V, 2 A glass passivated ultrafast recovery rectifier
RECTIFIER DIODE, DO-15
Ultrafast Recovery Rectifiers 超快恢复二极
Fagor
International Rectifier, Corp.
Vishay Intertechnology, Inc.
20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE Semiconductor
AB80-C1500RG AB380-C1500RG AB250-C1500RG AB40-C150 200 V, 1.5 A Avalanche glass passivated bridge rectifier
900 V, 1.5 A Avalanche glass passivated bridge rectifier
600 V, 1.5 A Avalanche glass passivated bridge rectifier
100 V, 1.5 A Avalanche glass passivated bridge rectifier
EIC discrete Semiconductors
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE Semiconductor
1N4007G 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N (1N4001G - 1N4007G) GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
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RECTRON[Rectron Semiconductor]
 
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